用157nm光刻技术制造50nm器件的可行性:初步评估

Pong Wing Tai, A. Wong
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引用次数: 1

摘要

采用归一化工艺纬度(NPL)评价了157nm光刻技术制造50nm器件的可行性。第一个NPL量化假设稳步改进的处理技术表明,157nm光刻是不可行的。国家物理实验室的第二个量化研究了使50纳米制造成为可能所需的技术加速量。结论是光刻技术是一种可行的光刻技术,只有在对焦控制,光掩膜制作,光刻胶对比度以及像差水平方面有显着改进。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Feasibility of 50-nm device manufacture by 157-nm optical lithography: an initial assessment
The normalized process latitude (NPL) is used to assess the feasibility of 50-nm device manufacture by 157-nm optical lithography. A first NPL quantification assuming steady improvement of processing technology shows that 157-nm optical lithography is infeasible. A second NPL quantification investigates the amount of technology acceleration required to make 50-nm manufacture possible. It is concluded that photolithography is a viable lithography technique for the 50-nm technology generation only with significant improvements in focus control, photomask making, photoresist contrast, as well as aberration levels.
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