改进GAA JLFET结构的直流和模拟/射频性能比较

Sudipta Ghosh, Abhiroop Jana, Agnivesh Kumar Agnihotri, Shirsha Kundu, Dyuti Das, S. Sarkar
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引用次数: 1

摘要

本文对双金属栅极-全无结硅FET (DMG GAA JLFET)、高k间隔层诱导对称叠合GAA JLFET (spacer GAA JLFET)和堆叠氧化物基GAA JLFET (SO GAA JLFET)结构进行了比较分析,以找出适合于适当应用的结构。直流和模拟/射频从漏极电流、阈值电压、电场、表面电位、亚阈值摆幅、固有电容、跨导和截止频率等方面分析了所提出器件的性能。利用SILVACO ATLAS三维器件模拟器对所提出的结构进行了详细的仿真研究。研究发现,spacer诱导的GAA JLFET具有最佳的静态性能,而DMG和SO GAA JLFET具有显著的模拟/ rf比他们的对手表现更好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
DC and Analog/RF Performance Comparison of Renovated GAA JLFET Structures
In this paper, a comparative analysis is conducted among Dual Metal Gate-All-Around Junctionless Silicon FET (DMG GAA JLFET), a high-k spacer induced symmetrically underlapped GAA JLFET (SPACER GAA JLFET) and a stacked oxide-based GAA JLFET (SO GAA JLFET) architectures to find out the suitable structure for appropriate applications. The DC and Analog/R.F. performances of proposed devices are analyzed in terms of drain current, threshold voltage, electric field, surface potential, Subthreshold swing, intrinsic capacitances, transconductances, and cut-off frequency. A detailed simulation study of the proposed structures is performed with the SILVACO ATLAS 3-D device simulator. It has been observed that SPACER-induced GAA JLFET gives the best static performances, whereas DMG and SO GAA JLFET show some significant Analog/R.F. performance improvement than their counterpart.
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