{"title":"改进GAA JLFET结构的直流和模拟/射频性能比较","authors":"Sudipta Ghosh, Abhiroop Jana, Agnivesh Kumar Agnihotri, Shirsha Kundu, Dyuti Das, S. Sarkar","doi":"10.1109/vlsidcs53788.2022.9811488","DOIUrl":null,"url":null,"abstract":"In this paper, a comparative analysis is conducted among Dual Metal Gate-All-Around Junctionless Silicon FET (DMG GAA JLFET), a high-k spacer induced symmetrically underlapped GAA JLFET (SPACER GAA JLFET) and a stacked oxide-based GAA JLFET (SO GAA JLFET) architectures to find out the suitable structure for appropriate applications. The DC and Analog/R.F. performances of proposed devices are analyzed in terms of drain current, threshold voltage, electric field, surface potential, Subthreshold swing, intrinsic capacitances, transconductances, and cut-off frequency. A detailed simulation study of the proposed structures is performed with the SILVACO ATLAS 3-D device simulator. It has been observed that SPACER-induced GAA JLFET gives the best static performances, whereas DMG and SO GAA JLFET show some significant Analog/R.F. performance improvement than their counterpart.","PeriodicalId":307414,"journal":{"name":"2022 IEEE VLSI Device Circuit and System (VLSI DCS)","volume":"108 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"DC and Analog/RF Performance Comparison of Renovated GAA JLFET Structures\",\"authors\":\"Sudipta Ghosh, Abhiroop Jana, Agnivesh Kumar Agnihotri, Shirsha Kundu, Dyuti Das, S. Sarkar\",\"doi\":\"10.1109/vlsidcs53788.2022.9811488\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a comparative analysis is conducted among Dual Metal Gate-All-Around Junctionless Silicon FET (DMG GAA JLFET), a high-k spacer induced symmetrically underlapped GAA JLFET (SPACER GAA JLFET) and a stacked oxide-based GAA JLFET (SO GAA JLFET) architectures to find out the suitable structure for appropriate applications. The DC and Analog/R.F. performances of proposed devices are analyzed in terms of drain current, threshold voltage, electric field, surface potential, Subthreshold swing, intrinsic capacitances, transconductances, and cut-off frequency. A detailed simulation study of the proposed structures is performed with the SILVACO ATLAS 3-D device simulator. It has been observed that SPACER-induced GAA JLFET gives the best static performances, whereas DMG and SO GAA JLFET show some significant Analog/R.F. performance improvement than their counterpart.\",\"PeriodicalId\":307414,\"journal\":{\"name\":\"2022 IEEE VLSI Device Circuit and System (VLSI DCS)\",\"volume\":\"108 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-02-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE VLSI Device Circuit and System (VLSI DCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/vlsidcs53788.2022.9811488\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE VLSI Device Circuit and System (VLSI DCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/vlsidcs53788.2022.9811488","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
DC and Analog/RF Performance Comparison of Renovated GAA JLFET Structures
In this paper, a comparative analysis is conducted among Dual Metal Gate-All-Around Junctionless Silicon FET (DMG GAA JLFET), a high-k spacer induced symmetrically underlapped GAA JLFET (SPACER GAA JLFET) and a stacked oxide-based GAA JLFET (SO GAA JLFET) architectures to find out the suitable structure for appropriate applications. The DC and Analog/R.F. performances of proposed devices are analyzed in terms of drain current, threshold voltage, electric field, surface potential, Subthreshold swing, intrinsic capacitances, transconductances, and cut-off frequency. A detailed simulation study of the proposed structures is performed with the SILVACO ATLAS 3-D device simulator. It has been observed that SPACER-induced GAA JLFET gives the best static performances, whereas DMG and SO GAA JLFET show some significant Analog/R.F. performance improvement than their counterpart.