{"title":"用于IC的宽可变量程VCXO","authors":"Y. Lee, Y. Sasaki, H. Otsuka, Y. Sekine","doi":"10.1109/FREQ.1996.560246","DOIUrl":null,"url":null,"abstract":"We suggest the use of a Miller capacitor as the variable capacitance circuit of the BJT-VCXO (VCXO using a bipolar junction transistor). When the external MOSFET's gate-drain capacitance is 10 pF, we show that the BJT-VCXO using this variable capacitance circuit has a wide frequency variation of about 500 ppm. Also, we suggest the use of the MOSFET's resistance change as the variable capacitance circuit of the CMOS-VCXO (VCXO using a CMOS crystal oscillator). When the external gate-drain capacitance is 30 pF, we show that the CMOS-VCXO using this variable capacitance circuit has a wide frequency variation of over 330 ppm.","PeriodicalId":140391,"journal":{"name":"Proceedings of 1996 IEEE International Frequency Control Symposium","volume":"77 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A wide variable range VCXO for IC\",\"authors\":\"Y. Lee, Y. Sasaki, H. Otsuka, Y. Sekine\",\"doi\":\"10.1109/FREQ.1996.560246\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We suggest the use of a Miller capacitor as the variable capacitance circuit of the BJT-VCXO (VCXO using a bipolar junction transistor). When the external MOSFET's gate-drain capacitance is 10 pF, we show that the BJT-VCXO using this variable capacitance circuit has a wide frequency variation of about 500 ppm. Also, we suggest the use of the MOSFET's resistance change as the variable capacitance circuit of the CMOS-VCXO (VCXO using a CMOS crystal oscillator). When the external gate-drain capacitance is 30 pF, we show that the CMOS-VCXO using this variable capacitance circuit has a wide frequency variation of over 330 ppm.\",\"PeriodicalId\":140391,\"journal\":{\"name\":\"Proceedings of 1996 IEEE International Frequency Control Symposium\",\"volume\":\"77 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1996 IEEE International Frequency Control Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/FREQ.1996.560246\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1996 IEEE International Frequency Control Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/FREQ.1996.560246","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We suggest the use of a Miller capacitor as the variable capacitance circuit of the BJT-VCXO (VCXO using a bipolar junction transistor). When the external MOSFET's gate-drain capacitance is 10 pF, we show that the BJT-VCXO using this variable capacitance circuit has a wide frequency variation of about 500 ppm. Also, we suggest the use of the MOSFET's resistance change as the variable capacitance circuit of the CMOS-VCXO (VCXO using a CMOS crystal oscillator). When the external gate-drain capacitance is 30 pF, we show that the CMOS-VCXO using this variable capacitance circuit has a wide frequency variation of over 330 ppm.
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