Tzu-Chao Yan, Chun-Hsing Li, Chih-Wei Lai, Wei-Cheng Chen, T. Chao, C. Kuo
{"title":"CMOS太赫兹透射成像系统","authors":"Tzu-Chao Yan, Chun-Hsing Li, Chih-Wei Lai, Wei-Cheng Chen, T. Chao, C. Kuo","doi":"10.1109/ASSCC.2014.7008887","DOIUrl":null,"url":null,"abstract":"This paper presents a THz imaging system composed of a signal source and a signal sensor in CMOS technology. The signal source integrates a 338 GHz oscillator in 40-nm CMOS and an antenna array on a Benzocyclobutene (BCB) carrier using the SoP (System-on-Package) technique. The measured EIRP achieves +8 dBm. The signal sensor is implemented in 0.18 μm CMOS. The measured maximum responsivity is 632 kV/W at 332 GHz. The signal source and signal sensor consume dc power of 37.5 mW and 7.92 mW, respectively. The resolution of the proposed THz imaging system is 4 mm.","PeriodicalId":161031,"journal":{"name":"2014 IEEE Asian Solid-State Circuits Conference (A-SSCC)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"CMOS THz transmissive imaging system\",\"authors\":\"Tzu-Chao Yan, Chun-Hsing Li, Chih-Wei Lai, Wei-Cheng Chen, T. Chao, C. Kuo\",\"doi\":\"10.1109/ASSCC.2014.7008887\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a THz imaging system composed of a signal source and a signal sensor in CMOS technology. The signal source integrates a 338 GHz oscillator in 40-nm CMOS and an antenna array on a Benzocyclobutene (BCB) carrier using the SoP (System-on-Package) technique. The measured EIRP achieves +8 dBm. The signal sensor is implemented in 0.18 μm CMOS. The measured maximum responsivity is 632 kV/W at 332 GHz. The signal source and signal sensor consume dc power of 37.5 mW and 7.92 mW, respectively. The resolution of the proposed THz imaging system is 4 mm.\",\"PeriodicalId\":161031,\"journal\":{\"name\":\"2014 IEEE Asian Solid-State Circuits Conference (A-SSCC)\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE Asian Solid-State Circuits Conference (A-SSCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASSCC.2014.7008887\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE Asian Solid-State Circuits Conference (A-SSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2014.7008887","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper presents a THz imaging system composed of a signal source and a signal sensor in CMOS technology. The signal source integrates a 338 GHz oscillator in 40-nm CMOS and an antenna array on a Benzocyclobutene (BCB) carrier using the SoP (System-on-Package) technique. The measured EIRP achieves +8 dBm. The signal sensor is implemented in 0.18 μm CMOS. The measured maximum responsivity is 632 kV/W at 332 GHz. The signal source and signal sensor consume dc power of 37.5 mW and 7.92 mW, respectively. The resolution of the proposed THz imaging system is 4 mm.