用于电机控制应用的高性能宽沟igbt

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764039

A. Bhalla, J. Gladish, A. Polny, P. Sargeant, G. Dolny

{"title":"用于电机控制应用的高性能宽沟igbt","authors":"A. Bhalla, J. Gladish, A. Polny, P. Sargeant, G. Dolny","doi":"10.1109/ISPSD.1999.764039","DOIUrl":null,"url":null,"abstract":"IGBTs with wide trench widths offer the possibility of an improved trade-off between conduction and switching loss due to the injection enhancement effect, while preserving the devices' short-circuit withstand capability. This makes them promising candidates for motor control applications. 600 V IGBTs with trench widths of 8-12 /spl mu/m have been successfully fabricated with excellent electrical characteristics. The critical trench shaping process is accomplished by the use of a long LOCOS-like oxidation after the deep and wide trench has been etched. They offer low on-state voltage drops, low turn-off losses, square RBSOA and good short-circuit capability.","PeriodicalId":352185,"journal":{"name":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"High performance wide trench IGBTs for motor control applications\",\"authors\":\"A. Bhalla, J. Gladish, A. Polny, P. Sargeant, G. Dolny\",\"doi\":\"10.1109/ISPSD.1999.764039\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"IGBTs with wide trench widths offer the possibility of an improved trade-off between conduction and switching loss due to the injection enhancement effect, while preserving the devices' short-circuit withstand capability. This makes them promising candidates for motor control applications. 600 V IGBTs with trench widths of 8-12 /spl mu/m have been successfully fabricated with excellent electrical characteristics. The critical trench shaping process is accomplished by the use of a long LOCOS-like oxidation after the deep and wide trench has been etched. They offer low on-state voltage drops, low turn-off losses, square RBSOA and good short-circuit capability.\",\"PeriodicalId\":352185,\"journal\":{\"name\":\"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1999.764039\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1999.764039","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

由于注入增强效应，具有宽沟槽宽度的igbt可以改善传导和开关损耗之间的权衡，同时保持器件的抗短路能力。这使它们成为电机控制应用的有希望的候选人。成功制备了沟槽宽度为8-12 /spl mu/m的600 V igbt，具有良好的电气特性。关键的沟槽成型过程是在深而宽的沟槽被蚀刻后，通过使用长locos样氧化来完成的。它们具有低导通电压降、低关断损耗、方形RBSOA和良好的短路能力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

High performance wide trench IGBTs for motor control applications

IGBTs with wide trench widths offer the possibility of an improved trade-off between conduction and switching loss due to the injection enhancement effect, while preserving the devices' short-circuit withstand capability. This makes them promising candidates for motor control applications. 600 V IGBTs with trench widths of 8-12 /spl mu/m have been successfully fabricated with excellent electrical characteristics. The critical trench shaping process is accomplished by the use of a long LOCOS-like oxidation after the deep and wide trench has been etched. They offer low on-state voltage drops, low turn-off losses, square RBSOA and good short-circuit capability.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

自引率

0.00%

发文量