平面电感耦合等离子体中InAs刻蚀的XPS研究

2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Pub Date : 2009-07-01 DOI:10.1109/EDM.2009.5173941

F. Dultsev, V. Kesler

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引用次数: 0

摘要

提出了一种涉及ICP等离子体和碳氢化合物基化学的InAs深度刻蚀方法。揭示了等离子体蚀刻的最佳条件和气相组成，以确保可接受的蚀刻速率并提供表面浮雕的保护。利用XPS研究了CH4/H2/Ar RF (13.56 MHz)和ICP等离子体对InAs (111)A表面组成的影响。结果表明，等离子体刻蚀导致表面砷损耗高达~ 18%。随后在盐酸饱和的异丙醇中进行化学蚀刻，在300°C下进行真空退火，恢复初始表面化学计量。

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XPS investigation of InAs etching in planar inductively coupled plasma

A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates and providing the conservation of the surface relief were revealed. The effect of the CH4/H2/Ar RF (13.56 MHz) and ICP plasma on the InAs (111)A surface composition was investigated using XPS. It was shown that plasma etching leads to arsenic depletion of the surface up to ∼18 %. Consequent chemical etching in isopropanol saturated with hydrochloric acid and vacuum annealing at 300°C restore the initial surface stoichiometry.

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2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices

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