Design of a high performance Sn-doped ZnO thin film MSM UV photodetector

Sn-doped ZnO thin film was prepared to enhance its photoelectric performance, and the ZnO based photodetector was fabricated by co-sputtering method. The I-V characteristic of the detector under different Sn doped DC sputtering power, the ultraviolet light source was set at 365 nm with 0.5 mW power. The examined photodetector performance manifest that optimum Sn doping level is investigated at 15 W, the maximum photocurrent and spectral responsivity are obtained to be 4.39 mA and 24.4 A/W, the fastest time response is obtained to be tr=29.0 ms and tf =33.2 ms.