{"title":"采用自举技术驱动大容性负载的CMOS绝热驱动器","authors":"J.C. Garcia, J. Montiel-Nelson, S. Nooshabadi","doi":"10.1109/ISCIT.2008.4700248","DOIUrl":null,"url":null,"abstract":"This paper presents the design of a highly energy efficient CMOS adiabatic driver (ee-driver). The proposed ee-driver uses an output stage with two bootstrap capacitors driven by a pre-driver circuit consisting of two differential cascode voltage switch (DCVS) logic cells. When implemented on a 0.13 mum CMOS 1.2 V technology, under the large capacitive loading condition, ee-driver performs better than the reference adiabatic circuit (ab-driver) in terms of propagation delay (39%), the energy-delay product (39%), and active area (57%).","PeriodicalId":215340,"journal":{"name":"2008 International Symposium on Communications and Information Technologies","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"CMOS Adiabatic Driver with Bootstrap Technique for Driving Large Capacitive Loads\",\"authors\":\"J.C. Garcia, J. Montiel-Nelson, S. Nooshabadi\",\"doi\":\"10.1109/ISCIT.2008.4700248\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design of a highly energy efficient CMOS adiabatic driver (ee-driver). The proposed ee-driver uses an output stage with two bootstrap capacitors driven by a pre-driver circuit consisting of two differential cascode voltage switch (DCVS) logic cells. When implemented on a 0.13 mum CMOS 1.2 V technology, under the large capacitive loading condition, ee-driver performs better than the reference adiabatic circuit (ab-driver) in terms of propagation delay (39%), the energy-delay product (39%), and active area (57%).\",\"PeriodicalId\":215340,\"journal\":{\"name\":\"2008 International Symposium on Communications and Information Technologies\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 International Symposium on Communications and Information Technologies\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCIT.2008.4700248\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Symposium on Communications and Information Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCIT.2008.4700248","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
本文介绍了一种高能效的CMOS绝热驱动器(ee-driver)的设计。所提出的e-驱动器使用一个输出级,由两个差分级联电压开关(DCVS)逻辑单元组成的预驱动电路驱动两个自引导电容器。当在0.13 μ m CMOS 1.2 V技术上实现时,在大容性负载条件下,e-驱动器在传播延迟(39%)、能量延迟积(39%)和有源面积(57%)方面优于参考绝热电路(ab-驱动器)。
CMOS Adiabatic Driver with Bootstrap Technique for Driving Large Capacitive Loads
This paper presents the design of a highly energy efficient CMOS adiabatic driver (ee-driver). The proposed ee-driver uses an output stage with two bootstrap capacitors driven by a pre-driver circuit consisting of two differential cascode voltage switch (DCVS) logic cells. When implemented on a 0.13 mum CMOS 1.2 V technology, under the large capacitive loading condition, ee-driver performs better than the reference adiabatic circuit (ab-driver) in terms of propagation delay (39%), the energy-delay product (39%), and active area (57%).