GaAs MESFET技术中的10ghz运算放大器

IEEE International Solid-State Circuits Conference, 1989 ISSCC. Digest of Technical Papers Pub Date : 1989-02-15 DOI:10.1109/ISSCC.1989.48184

L. Larson, C. Chou, D. Deakin, W. Hooper, J. Jensen, M. Thompson, M. Delaney, L. McCray, S. Rosenbaum, D. Pierson

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引用次数: 7

摘要

以往GaAs技术中高性能运放的实现受到低晶体管g/sub / m/r/sub / ds/、光灵敏度和过度背闸等因素的阻碍，这些因素限制了增益和带宽。通过使用改进的处理技术和电路设计方法，在电路中克服了这些限制。GaAs MESFET耗尽模式n沟道技术采用0.2 μ m电子束定义栅极，空气桥互连以实现低电容，以及分子束外延(MBE)来生长沟道层。所得fet的平均阈值电压为-0.6 V，外在跨导约为500 mS/mm。在单个设备上的H/sub /测量得到的外推f/sub /约为8 GHz。图中给出了一个50 μ m宽器件的小信号等效电路模型，该模型是由测量的s参数推导出来的，并给出了得到的元件值

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A 10 GHz operational amplifier in GaAs MESFET technology

Previous implementations of high-performance op amps in GaAs technology have been hindered by low transistor g/sub m/r/sub ds/, light sensitivity, and excessive backgating, which have limited gain and bandwidth. These limitations are overcome in the circuit reported here by the use of improved processing technologies and circuit design approaches. The GaAs MESFET depletion-mode n-channel technology employs 0.2- mu m e-beam defined gates, air-bridge interconnects for low capacitance, and molecular beam epitaxy (MBE) to grow the channel layers. The average threshold voltage of the resulting FETs is -0.6 V, and the extrinsic transconductance is approximately 500 mS/mm. H/sub 21/ measurements on individual devices yield an extrapolated f/sub T/ of approximately 8 GHz. The small-signal equivalent circuit model of a 50- mu m-wide device, derived from the measured S-parameters, is shown, and the resulting element values are presented.<>

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IEEE International Solid-State Circuits Conference, 1989 ISSCC. Digest of Technical Papers

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