用斜面跟踪冲蚀试验法研究加和不加ATH填料的室温硫化硅绝缘材料

Chirag.K. Vibhakar, Rafiq Mathersa, B. Dutta, M. Vasavada, N. Vasudev
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引用次数: 2

摘要

在电力系统中,由污染引起的绝缘闪络仍然是一个世界性的问题。在一些污染严重的地区,高达33%的停电问题归咎于污染。因此,供电强度是电力系统的首要问题。要求介质材料的鲁棒性在横向移动的恶劣条件下。由于硅橡胶质轻、机械质量高、抗污性能好,绝缘子生产已由陶瓷和玻璃保护层转向硅橡胶。尽管如此,硅橡胶由于干带电弧而无法跟随和分解,而且成熟和长期导电等特性也不清楚。因此,用硅橡胶代替目前电力系统中陶瓷涂料的结构是很麻烦的。通过这种方式,室温硫化(RTV)硅涂层被用作强保护材料的一部分,倾向于解决这些问题。此外,RTV覆盖层对污染物条纹的抵抗性能依赖于物质结构和填充材料。通过这种方式,本综述探讨了根据IEC 60587一致跟随电压措施,在有和没有填料堆叠的RTV硅的封装执行过程中,分解和泄漏电流审查。本标准描述了在功率频率下的极端环境条件下使用的电气保护材料的发展,利用流体污染物和斜面为例,通过对下列和解体的不渗透性的估计。对于漏电电流的估计,在并联装置上设置了微型示波器接口和保护电路。用连接电压对有和没有氢氧化铝(ATH)填料堆积硅橡胶材料的RTV的漏电流进行了算例分析。FTIR、热分析、TGA、SEM-EDXA等RTV测试的复合研究分别做了前后跟随和解体试验。研究和结论表明,与不加ATH填料堆砌的RTV试验相比,ATH填料堆砌的RTV试验在随动和崩解过程中具有更好的电阻性,并表现出优异的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Investigation on Room Temperature Vulcanized Silicon Insulation With and Without ATH Filler Loading by Incline Plane Tracking & Erosion Test Method
Insulation flashovers because of tainting are still a worldwide issue in the power System. In some dirtied areas, up to 33% of all blackout issues are credited to contamination. So strength of the power supply is a first worry in the power System. Robustness in the dielectric materials crosswise over shifting severe conditions is required. Insulator producing has changed over from porcelain and glass protectors to silicon rubber because of its light weight and high mechanical quality and better contaminant opposing execution. Be that as it may, silicon rubber has powerlessness to following and disintegration because of dry band arcing, alongside the qualities like maturing and long haul conduct is obscure. These are the reasons, for which, substitution of the current structure of porcelain coatings in the power System by silicon rubber is troublesome. In this way, Room Temperature Vulcanized (RTV) Silicon coatings is utilized as a part of strong protecting material tending to solutions for these issues. Additionally, resistive properties of RTV covering against contaminant streak over rely on substance structure and filler material. In this way, the present review explores the encasing execution amid following, disintegration and leakage current reviews on RTV Silicon with and without filler stacking examples according to IEC 60587 measures for consistent following voltage. This standard portrays the development of electrical protecting materials utilized under extreme surrounding conditions at power frequencies by estimation of the imperviousness to following and disintegration, utilizing a fluid contaminant and inclined plane examples. For the leakage current estimation, Pico scope interface and a protective circuit were made over the shunt. The leakage current example has been examined with connected voltage for the RTV with and without ATH (Aluminum Tri Hydroxide) filler stacking silicon rubber material. Compound investigation on RTV tests like FTIR, thermal study TGA and morphological study by SEM-EDXA; have been done before and in the wake of following and disintegration test. Comes about and conclusion demonstrates that RTV tests with ATH filler stacking are all the more electrically resistive amid following and disintegration and displays fantastic properties contrasted with RTV tests without ATH filler stacking.
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