{"title":"器件应用中掺铁半绝缘磷化铟衬底的表征","authors":"C. Grattepain, A. Huber","doi":"10.1109/SIM.1992.752699","DOIUrl":null,"url":null,"abstract":"The goal of this paper is the presentation of InP(Fe) characterization results obtained by etching technique on chemically angle polished samples (ETOCAPS) and secondary ion mass spectrometry (SIMS). Polishing quality of surfaces, internal crystal structures and chemical composition will studied of wafers from three suppliers of the world-market.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fe doped semi-insulating indium phosphide substrate characterization for device applications\",\"authors\":\"C. Grattepain, A. Huber\",\"doi\":\"10.1109/SIM.1992.752699\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The goal of this paper is the presentation of InP(Fe) characterization results obtained by etching technique on chemically angle polished samples (ETOCAPS) and secondary ion mass spectrometry (SIMS). Polishing quality of surfaces, internal crystal structures and chemical composition will studied of wafers from three suppliers of the world-market.\",\"PeriodicalId\":368607,\"journal\":{\"name\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1992.752699\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1992.752699","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fe doped semi-insulating indium phosphide substrate characterization for device applications
The goal of this paper is the presentation of InP(Fe) characterization results obtained by etching technique on chemically angle polished samples (ETOCAPS) and secondary ion mass spectrometry (SIMS). Polishing quality of surfaces, internal crystal structures and chemical composition will studied of wafers from three suppliers of the world-market.
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