{"title":"对(异质结)双极晶体管中雪崩倍增引起的过量噪声进行建模","authors":"J. Paasschens, R. de Kort","doi":"10.1109/BIPOL.2004.1365757","DOIUrl":null,"url":null,"abstract":"We study the noise behaviour of bipolar transistors for collector voltages close to and beyond the collector-emitter breakdown voltage. We model the excess noise due to amplification of shot noise and due to the impact ionisation itself, both for weak avalanche and for strong avalanche. Our new model accurately predicts the measurements, without the need for parameter fitting to noise data.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"Modelling the excess noise due to avalanche multiplication in (hetero-junction) bipolar transistors\",\"authors\":\"J. Paasschens, R. de Kort\",\"doi\":\"10.1109/BIPOL.2004.1365757\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We study the noise behaviour of bipolar transistors for collector voltages close to and beyond the collector-emitter breakdown voltage. We model the excess noise due to amplification of shot noise and due to the impact ionisation itself, both for weak avalanche and for strong avalanche. Our new model accurately predicts the measurements, without the need for parameter fitting to noise data.\",\"PeriodicalId\":447762,\"journal\":{\"name\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-12-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.2004.1365757\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365757","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modelling the excess noise due to avalanche multiplication in (hetero-junction) bipolar transistors
We study the noise behaviour of bipolar transistors for collector voltages close to and beyond the collector-emitter breakdown voltage. We model the excess noise due to amplification of shot noise and due to the impact ionisation itself, both for weak avalanche and for strong avalanche. Our new model accurately predicts the measurements, without the need for parameter fitting to noise data.
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