带天线分割的IQ发射机阵列8位140 ghz功率dac单元

S. Shopov, S. Voinigescu
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引用次数: 12

摘要

8位功率dac单元首次在d波段的45纳米SOI CMOS技术上进行了演示。该电路验证了从w波段到d波段天线分割的发射机阵列结构的可扩展性。功率- dac单元的最后两级采用新颖的两级共门吉尔伯特单元拓扑结构,具有串联堆叠,可直接调制125- 144ghz载波的相位和幅度。功率- DAC单元的测量增益、饱和输出功率和PAE分别为14.9 dB、13.2 dBm和2.8%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An 8-Bit 140-GHz Power-DAC Cell for IQ Transmitter Arrays with Antenna Segmentation
An 8-bit power-DAC cell is demonstrated for the first time at D-band in a production 45-nm SOI CMOS technology. The circuit proves the scalability of the transmitter array architecture with antenna segmentation from the W-band to the D-band. The last two stages of the power-DAC cell employ a novel two-stage common-gate Gilbert-cell topology with series-stacking to directly modulate a 125-144 GHz carrier in phase and in amplitude. The measured gain, saturated output power, and PAE of the power- DAC cell are 14.9 dB, 13.2 dBm, and 2.8%, respectively.
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