基于SiGe BiCMOS工艺的高可调谐12ghz正交LC-VCO

2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185) Pub Date : 2001-06-14 DOI:10.1109/VLSIC.2001.934212

A. L. Coban, K. Ahmed, C. Chang

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引用次数: 18

摘要

本文介绍了一种12ghz全集成、全差分正交LC压控振荡器。该振荡器采用0.35 /spl mu/m SiGe BiCMOS工艺，55 GHz f/sub / T/，可实现37%的调谐范围(9.62至14.0 GHz)，在距离11 GHz和13 GHz振荡频率10 MHz处分别显示113.5和-112.3 dBc/Hz的相位噪声。振荡器从3.3 V电源吸取39 mA电流，占用0.36 mm/sup 2/有源芯片面积。

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A highly-tunable 12 GHz quadrature LC-VCO in SiGe BiCMOS process

This paper describes a 12 GHz fully-integrated, fully-differential quadrature LC VCO. Fabricated in a 0.35 /spl mu/m SiGe BiCMOS process with 55 GHz f/sub T/, the oscillator achieves 37% tuning range (9.62 to 14.0 GHz) and exhibits 113.5 and -112.3 dBc/Hz phase noise at 10 MHz away from 11 and 13 GHz oscillation frequencies, respectively. The oscillator draws 39 mA current from a 3.3 V supply and occupies 0.36 mm/sup 2/ active die area.

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2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185)

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