InP上Ga/sub x/ in /sub 1-x/As/sub z/P/sub 1-z//Ga/sub y/ in /sub 1-y/As/sub z/P/sub 1-z/超晶格中的Wannier-Stark效应

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.492023

B. Opitz, A. Kohl, A. Behres, K. Mertens, K. Heime, H. Schmitt

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摘要

在恒定As含量的movpe应变平衡Ga/sub x/ in /sub 1-x/As/sub z/P/sub 1-z//Ga/sub y/ in /sub 1-y/As/sub z/P/sub 1-z/超晶格中观察到Wannier-Stark效应。观测到的跃迁可以用一个简单的理论模型很好地描述。通过对浅超晶格的精心设计，可以将其弱载流子约束的优点与室温下的操作相结合。在波导结构中进行的首次测量产生了42 dB/(Vmm)的电吸收调制比，这与当前cbe生长的GaInAs/InP超晶格数据相当。

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Wannier-Stark effect in Ga/sub x/In/sub 1-x/As/sub z/P/sub 1-z//Ga/sub y/In/sub 1-y/As/sub z/P/sub 1-z/ superlattices on InP

We observed the Wannier-Stark effect in MOVPE-grown strain balanced Ga/sub x/In/sub 1-x/As/sub z/P/sub 1-z//Ga/sub y/In/sub 1-y/As/sub z/P/sub 1-z/ superlattices with constant As-content. The observed transitions could be well described by a simple theoretical model. By careful design of the shallow superlattice, the advantages of its weak carrier confinement can be combined with operation at room temperature. First measurements in waveguide configuration yield an electroabsorptive modulation ratio of 42 dB/(Vmm), which is comparable with current CBE-grown GaInAs/InP superlattice data.

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Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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