用RTCVD制备亚四分之一微米CMOS器件的超薄氧化/氮化栅极堆

2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517) Pub Date : 1900-01-01 DOI:10.1109/VTSA.2001.934521

M. Wang, C. Chen, M.C. Yu, T. Hou, Y.M. Lin, S.C. Chcn, Y. Fang, C. Yu, M. Liang

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引用次数: 0

摘要

本文简要介绍了亚四分之一微米CMOS工艺中快速热化学气相沉积(RTCVD)制备的ox/氮化物栅堆。主要研究了不同界面氧化物在氧化氮栅堆中的不同特性。还研究了沉积后退火，包括NH/sub - 3/和N/sub - 2/O处理。优异的改进包括更低的栅极泄漏电流，可比较的驱动电流，合适的界面状态密度和稳定的栅极介电可靠性。

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Ultrathin ox/nitride gate stack for sub-quarter-micron CMOS devices prepared by RTCVD

The paper gives a short overview of ox/nitride gate stack prepared by rapid thermal chemical vapor deposition (RTCVD) for sub-quarter-micron CMOS process. The main portion is focused on the dissimilar characteristics of different interfacial oxide in ox/nitride gate stack. Post deposition annealing is also investigated including NH/sub 3/ and N/sub 2/O treatment. Excellent improvements are available including lower gate leakage current, comparable driving current, suitable interface density of states and stable gate dielectric reliability.

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2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517)

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