外部导体存在时屏蔽退化

B. L. Brench, C. Brench
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引用次数: 5

摘要

当外部导体位于EMI屏蔽孔附近时,通过这些孔耦合的能量量可以大大增加。作者早期的工作仅限于几何形状相对于感兴趣的波长较小的问题。使用时域有限差分(FDTD)技术可以为更大的几何图形找到解决方案。本文对各种几何形状进行了分析,并提出了研究结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Shield degradation in the presence of external conductors
When an external conductor is located in close proximity to apertures in an EMI shield the amount of energy coupled through these apertures can be greatly increased. Earlier work by the authors was limited to problems where the geometry was small compared to the wavelength of interest. Using the finite difference time domain (FDTD) technique a solution can be found for much larger geometries. A variety of geometries have been analyzed and the findings are presented in this paper.<>
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