{"title":"基于同轴腔腔谐振腔的近场扫描微波显微镜用于半导体结构的表征","authors":"Bendehiba Abadlia Bagdad, F. Gámiz","doi":"10.1109/ULIS.2018.8354747","DOIUrl":null,"url":null,"abstract":"In this work, we have designed, simulated and fabricated a near-field scanning microwave microscope based on a coaxial cavity resonator. The coaxial cavity resonator is fed by a Keysight N5242A PNA-X Network Analyzer. The inner conductor of the coaxial resonator is connected to a sharpened tungsten tip home-made in our Lab following an electrochemical process. The transmission coefficient S21, the resonance frequency fr and the quality factor Q are measured as the sharp tip is scanned over the device under test at a fixed sample-tip distance in the near field region. The variations of these parameters are related to the topographical and dielectric properties of a very small region of the material under the tip.","PeriodicalId":383788,"journal":{"name":"2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Near field scanning microwave microscope based on a coaxial cavity resonator for the characterization of semiconductor structures\",\"authors\":\"Bendehiba Abadlia Bagdad, F. Gámiz\",\"doi\":\"10.1109/ULIS.2018.8354747\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we have designed, simulated and fabricated a near-field scanning microwave microscope based on a coaxial cavity resonator. The coaxial cavity resonator is fed by a Keysight N5242A PNA-X Network Analyzer. The inner conductor of the coaxial resonator is connected to a sharpened tungsten tip home-made in our Lab following an electrochemical process. The transmission coefficient S21, the resonance frequency fr and the quality factor Q are measured as the sharp tip is scanned over the device under test at a fixed sample-tip distance in the near field region. The variations of these parameters are related to the topographical and dielectric properties of a very small region of the material under the tip.\",\"PeriodicalId\":383788,\"journal\":{\"name\":\"2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-03-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ULIS.2018.8354747\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULIS.2018.8354747","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Near field scanning microwave microscope based on a coaxial cavity resonator for the characterization of semiconductor structures
In this work, we have designed, simulated and fabricated a near-field scanning microwave microscope based on a coaxial cavity resonator. The coaxial cavity resonator is fed by a Keysight N5242A PNA-X Network Analyzer. The inner conductor of the coaxial resonator is connected to a sharpened tungsten tip home-made in our Lab following an electrochemical process. The transmission coefficient S21, the resonance frequency fr and the quality factor Q are measured as the sharp tip is scanned over the device under test at a fixed sample-tip distance in the near field region. The variations of these parameters are related to the topographical and dielectric properties of a very small region of the material under the tip.