用于可重构射频和开关应用的12.5太赫兹Fco GeTe内联相变开关技术

N. El-Hinnawy, P. Borodulin, E. B. Jones, B. Wagner, M. King, J. Mason, J. Bain, J. Paramesh, T. E. Schlesinger, R. Howell, Michael J. Lee, R. Young
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引用次数: 45

摘要

GeTe内联相变开关(IPCS)技术的改进导致了创纪录的射频(RF)开关。测量到导通状态电阻为0.9 Ω (0.027 Ω·mm),关断状态电容和电阻分别为14.1 fF和30 kΩ,从而计算出12.5太赫兹的开关截止频率(Fco)。这是迄今为止报道的硫族化物开关所取得的最高Fco。测量这些器件的阈值电压(Vth)为3V,测量的三阶截距点(TOI)为72 dBm。制作了单极单掷(SPST)开关,在18 GHz时,导通状态下的插入损耗小于0.15 dB,关断状态下的隔离度小于15dB。单极双掷(SPDT)开关采用完整的背面工艺,通过衬底过孔制造,测量插入损耗为0.25 dB,隔离度为35dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
12.5 THz Fco GeTe Inline Phase-Change Switch Technology for Reconfigurable RF and Switching Applications
Improvements to the GeTe inline phase-change switch (IPCS) technology have resulted in a record-performing radio-frequency (RF) switch. An ON-state resistance of 0.9 Ω (0.027 Ω·mm) with an OFF-state capacitance and resistance of 14.1 fF and 30 kΩ, respectively, were measured, resulting in a calculated switch cutoff frequency (Fco) of 12.5 THz. This represents the highest reported Fco achieved with chalcogenide switches to date. The threshold voltage (Vth) for these devices was measured at 3V and the measured third-order intercept point (TOI) was 72 dBm. Single-pole, single-throw (SPST) switches were fabricated, with a measured insertion loss less than 0.15 dB in the ON-state, and 15dB isolation in the OFF-state at 18 GHz. Single-pole, double-throw (SPDT) switches were fabricated using a complete backside process with through-substrate vias, with a measured insertion loss 0.25 dB, and 35dB isolation.
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