高度可靠的TaOx ReRAM，具有集中灯丝，适用于28纳米嵌入式应用

2015 Symposium on VLSI Technology (VLSI Technology) Pub Date : 2015-06-16 DOI:10.1109/VLSIC.2015.7231381

Y. Hayakawa, A. Himeno, R. Yasuhara, Werner Boullart, E. Vecchio, T. Vandeweyer, Thomas Witters, D. Crotti, Malgorzata Jurczak, S. Fujii, S. Ito, Y. Kawashima, Yuichiro Ikeda, A. Kawahara, K. Kawai, Z. Wei, S. Muraoka, K. Shimakawa, T. Mikawa, S. Yoneda

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引用次数: 59

摘要

对于28纳米的嵌入式应用，我们提出了一种基于taox的ReRAM，具有精确的灯丝定位和高热稳定性。该电池采用了几种新开发的工艺技术和电池结构:低损伤蚀刻、电池侧氧化和封装电池结构。结果，我们第一次成功地在细胞中心形成了细丝。此外，我们证实了20纳米电池尺寸的可行性。在2mbit - 40nm ReRAM中实现了出色的可靠性:在85°C下证明了100k周期和10年的保留率。

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Highly reliable TaOx ReRAM with centralized filament for 28-nm embedded application

For 28-nm embedded application, we have proposed a TaOx-based ReRAM with precise filament positioning and high thermal stability. The cell was realized using several newly-developed process technologies and cell structures: low-damage etching, cell side oxidation and encapsulated cell structure. As a result, we succeeded for the first time in forming a filament at the cell center. In addition, we confirmed the feasibility of 20-nm cell size. Excellent reliability was achieved in 2-Mbit 40-nm ReRAM: 100k cycles and 10 years' retention at 85 °C was demonstrated.

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2015 Symposium on VLSI Technology (VLSI Technology)

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