SiGeSn技术在中红外集成光子学中的应用进展

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI:10.1109/BCICTS45179.2019.8972759

Shui-Qing Yu, Yiyin Zhou, Huong Tran, Baohua Li, S. Ghetmiri, A. Mosleh, M. Mortazavi, W. Du, G. Sun, R. Soref, J. Margetis, J. Tolle

{"title":"SiGeSn技术在中红外集成光子学中的应用进展","authors":"Shui-Qing Yu, Yiyin Zhou, Huong Tran, Baohua Li, S. Ghetmiri, A. Mosleh, M. Mortazavi, W. Du, G. Sun, R. Soref, J. Margetis, J. Tolle","doi":"10.1109/BCICTS45179.2019.8972759","DOIUrl":null,"url":null,"abstract":"GeSn DHS and QW lasers and photoconductors have been investigated. For laser, the maximum operation temperature of 270 K and wavelength of 3.5 µm were achieved; for detector, spectral cut-off was measured at 3.6 µm.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Development of SiGeSn Technique towards Integrated Mid-Infrared Photonics Applications\",\"authors\":\"Shui-Qing Yu, Yiyin Zhou, Huong Tran, Baohua Li, S. Ghetmiri, A. Mosleh, M. Mortazavi, W. Du, G. Sun, R. Soref, J. Margetis, J. Tolle\",\"doi\":\"10.1109/BCICTS45179.2019.8972759\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GeSn DHS and QW lasers and photoconductors have been investigated. For laser, the maximum operation temperature of 270 K and wavelength of 3.5 µm were achieved; for detector, spectral cut-off was measured at 3.6 µm.\",\"PeriodicalId\":243314,\"journal\":{\"name\":\"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCICTS45179.2019.8972759\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS45179.2019.8972759","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

研究了GeSn、DHS和QW激光器和光导体。激光器的最大工作温度为270 K，工作波长为3.5µm;检测器的光谱截止点为3.6µm。

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Development of SiGeSn Technique towards Integrated Mid-Infrared Photonics Applications

GeSn DHS and QW lasers and photoconductors have been investigated. For laser, the maximum operation temperature of 270 K and wavelength of 3.5 µm were achieved; for detector, spectral cut-off was measured at 3.6 µm.

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2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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