最小工作电压(VDDmin)与90纳米CMOS环形振荡器块尺寸的关系及其在低功率DFM中的意义

T. Niiyama, Piao Zhe, K. Ishida, M. Murakata, M. Takamiya, T. Sakurai
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引用次数: 20

摘要

研究了90纳米CMOS环形振荡器的最小工作电压(VDDmin),以明确逻辑电路供电电压(VDD)的下限。测量到的VDDmin由芯片内阈值电压随机变化决定,当RO级数从11级增加到1001级时,VDDmin从91 mV增加到224 mV,阻碍了VDD的缩放。降低VDDmin是困难的,因为它需要一个不切实际的逆变器对逆变器的自适应体偏置控制。因此,细粒度自适应VDD控制将更有效地降低超低电压逻辑电路的功耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Dependence of Minimum Operating Voltage (VDDmin) on Block Size of 90-nm CMOS Ring Oscillators and its Implications in Low Power DFM
The minimum operating voltage (VDDmin) of 90-nm CMOS ring oscillators (RO's) is investigated in order to clarify the lower limit of supply voltage (VDD) for logic circuits. The measured VDDmin is determined by the intra-die threshold voltage random variations and increased from 91 mV to 224 mV when the number of RO stages increased from 11 to 1001, which hinders the VDD scaling. Lowering VDDmin is difficult, since it would require an impractical inverter-by-inverter adaptive body bias control. Therefore, the fine-grain adaptive VDD control will be more effective for the ultra low voltage logic circuits to reduce the power consumption.
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