CMOS V-I转换器,75dB SFDR, 360/spl mu/W功耗

S. Ouzounov, E. Roza, H. Hegt, G. V. D. Weide, A. Roermund
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引用次数: 5

摘要

这项工作描述了一种线性CMOS电压-电流转换器(V-I转换器或transconductor)的新电路解决方案。该电路利用交叉耦合和局部电阻反馈的组合来显著地同时抑制晶体管特性中的三阶和五阶谐波失真分量。给出了晶体管的实现,并以数字0.18 /spl mu/m CMOS技术实现了VI转换器的原型。在10mhz频段内测得的SFDR为75db。电路占用0.02 mm/sup 2/,功耗360 /spl mu/W。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
CMOS V-I converter with 75dB SFDR and 360/spl mu/W power consumption
This work describes a new circuit solution for a linear, CMOS voltage-to-current converter (V-I converter or transconductor). The circuit utilizes a combination of cross-coupling and local resistive feedback for a significant, simultaneous suppression of the third and the fifth order harmonic distortion components in the transconductor characteristics. The transistor implementation is presented and a prototype VI converter is realised in a digital 0.18 /spl mu/m CMOS technology. The measured SFDR is 75 dB in a frequency band of 10 MHz. The circuit occupies 0.02 mm/sup 2/ and dissipates 360 /spl mu/W.
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