Sungsoo Choi, Kyungho Lee, Jung-Hyun Yun, Suyoung Choi, Seungjoon Lee, J. Park, E. Shim, J. Pyo, Bumsuk Kim, Minwook Jung, Yunki Lee, Kyungmok Son, Sangil Jung, Tae-Shick Wang, Yunseok Choi, D. Min, Joon-Hyuk Im, Changrok Moon, Duckhyung Lee, Duckhyun Chang
{"title":"一种全像素PDAF CMOS图像传感器，采用0.64μmx1.28μm光电二极管，采用自对准像素深沟槽隔离，实现高自动对焦性能","authors":"Sungsoo Choi, Kyungho Lee, Jung-Hyun Yun, Suyoung Choi, Seungjoon Lee, J. Park, E. Shim, J. Pyo, Bumsuk Kim, Minwook Jung, Yunki Lee, Kyungmok Son, Sangil Jung, Tae-Shick Wang, Yunseok Choi, D. Min, Joon-Hyuk Im, Changrok Moon, Duckhyung Lee, Duckhyun Chang","doi":"10.23919/VLSIT.2017.7998212","DOIUrl":null,"url":null,"abstract":"We present a CMOS image sensor (CIS) with phase detection auto-focus (PDAF) in all pixels. The size of photodiode (PD) is 0.64μm by 1.28μm, the smallest ever reported and two PDs compose a single pixel. Inter PD isolation was fabricated by deep trench isolation (DTI) process in order to obtain an accurate AF performance. The layout and depth of DTI was optimized in order to eliminate side effects and maximize the performance even at extremely low light condition up to 1lux. In particular the AF performance remains comparable to that of 0.70μm dual PD CIS. By using our unique technology, it seems plausible to scale further down the size of pixels in dual PD CIS without sacrificing AF performance.","PeriodicalId":333275,"journal":{"name":"2017 Symposium on VLSI Technology","volume":"66 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"An all pixel PDAF CMOS image sensor with 0.64μmx1.28μm photodiode separated by self-aligned in-pixel deep trench isolation for high AF performance\",\"authors\":\"Sungsoo Choi, Kyungho Lee, Jung-Hyun Yun, Suyoung Choi, Seungjoon Lee, J. Park, E. Shim, J. Pyo, Bumsuk Kim, Minwook Jung, Yunki Lee, Kyungmok Son, Sangil Jung, Tae-Shick Wang, Yunseok Choi, D. Min, Joon-Hyuk Im, Changrok Moon, Duckhyung Lee, Duckhyun Chang\",\"doi\":\"10.23919/VLSIT.2017.7998212\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a CMOS image sensor (CIS) with phase detection auto-focus (PDAF) in all pixels. The size of photodiode (PD) is 0.64μm by 1.28μm, the smallest ever reported and two PDs compose a single pixel. Inter PD isolation was fabricated by deep trench isolation (DTI) process in order to obtain an accurate AF performance. The layout and depth of DTI was optimized in order to eliminate side effects and maximize the performance even at extremely low light condition up to 1lux. In particular the AF performance remains comparable to that of 0.70μm dual PD CIS. By using our unique technology, it seems plausible to scale further down the size of pixels in dual PD CIS without sacrificing AF performance.\",\"PeriodicalId\":333275,\"journal\":{\"name\":\"2017 Symposium on VLSI Technology\",\"volume\":\"66 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/VLSIT.2017.7998212\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSIT.2017.7998212","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An all pixel PDAF CMOS image sensor with 0.64μmx1.28μm photodiode separated by self-aligned in-pixel deep trench isolation for high AF performance
We present a CMOS image sensor (CIS) with phase detection auto-focus (PDAF) in all pixels. The size of photodiode (PD) is 0.64μm by 1.28μm, the smallest ever reported and two PDs compose a single pixel. Inter PD isolation was fabricated by deep trench isolation (DTI) process in order to obtain an accurate AF performance. The layout and depth of DTI was optimized in order to eliminate side effects and maximize the performance even at extremely low light condition up to 1lux. In particular the AF performance remains comparable to that of 0.70μm dual PD CIS. By using our unique technology, it seems plausible to scale further down the size of pixels in dual PD CIS without sacrificing AF performance.
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