提出了一种在高均匀性的HfO2 RRAM中获得每单元3位容量的新操作方案

2017 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2017-06-01 DOI:10.23919/SNW.2017.8242308

D. Zhu, Xiangxiang Ding, Peng Huang, Zheng Zhou, Xiaolu Ma, Lifeng Liu, Jinfeng Kang, Xing Zhang

{"title":"提出了一种在高均匀性的HfO2 RRAM中获得每单元3位容量的新操作方案","authors":"D. Zhu, Xiangxiang Ding, Peng Huang, Zheng Zhou, Xiaolu Ma, Lifeng Liu, Jinfeng Kang, Xing Zhang","doi":"10.23919/SNW.2017.8242308","DOIUrl":null,"url":null,"abstract":"In this work, HfO2 based resistive random access memory (RRAM) is fabricated and 3-bit storage capacity per cell is demonstrated under both DC and AC mode. In the AC mode, a new operation scheme of balancing set process and reset process is proposed to improve the resistance distribution uniformity (relative standard deviation about 21.1%). The relatives between set and reset parameters are also discussed and a simple model is used to explain these results.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A new operation scheme to obtain 3-bit capacity per cell in HfO2 based RRAM with high uniformity\",\"authors\":\"D. Zhu, Xiangxiang Ding, Peng Huang, Zheng Zhou, Xiaolu Ma, Lifeng Liu, Jinfeng Kang, Xing Zhang\",\"doi\":\"10.23919/SNW.2017.8242308\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, HfO2 based resistive random access memory (RRAM) is fabricated and 3-bit storage capacity per cell is demonstrated under both DC and AC mode. In the AC mode, a new operation scheme of balancing set process and reset process is proposed to improve the resistance distribution uniformity (relative standard deviation about 21.1%). The relatives between set and reset parameters are also discussed and a simple model is used to explain these results.\",\"PeriodicalId\":424135,\"journal\":{\"name\":\"2017 Silicon Nanoelectronics Workshop (SNW)\",\"volume\":\"95 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SNW.2017.8242308\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2017.8242308","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

在这项工作中，制作了基于HfO2的电阻式随机存取存储器(RRAM)，并在直流和交流模式下验证了每个单元的3位存储容量。在交流模式下，为了提高电阻分布均匀性(相对标准偏差约为21.1%)，提出了一种新的设置过程和复位过程平衡的运行方案。还讨论了设定参数和重置参数之间的关系，并用一个简单的模型来解释这些结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A new operation scheme to obtain 3-bit capacity per cell in HfO2 based RRAM with high uniformity

In this work, HfO2 based resistive random access memory (RRAM) is fabricated and 3-bit storage capacity per cell is demonstrated under both DC and AC mode. In the AC mode, a new operation scheme of balancing set process and reset process is proposed to improve the resistance distribution uniformity (relative standard deviation about 21.1%). The relatives between set and reset parameters are also discussed and a simple model is used to explain these results.

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2017 Silicon Nanoelectronics Workshop (SNW)

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