CMOS柯氏振荡器的相位噪声分析

Xiaoyan Wang, P. Andreani
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引用次数: 2

摘要

本文给出了Colpitts振荡器1/f2区域相位噪声的封闭符号公式。通过仿真验证了基于公式的计算结果,在一般假设下得到了准确的结果。提出了一种新的差分科尔皮振荡器拓扑结构,用中心抽头电感代替共模电容耦合两个单端科尔皮振荡器。对比了差分Colpitts振荡器和交叉耦合LC-tank振荡器的相位噪声,表明LC-tank振荡器在相同工作条件下具有更好的相位噪声。几个Copitts和交叉耦合振荡器的原型已经在0.35μm CMOS工艺中实现。LC-tank振荡器的最佳性能显示,在3GHz载波的3MHz偏置频率下,相位噪声为139db /Hz,功耗为10mW,从而获得了189dBC/Hz的优异相位噪声值(FoM)。在相同的工作条件下,差动式Colpitts振荡器显示的FoM比交叉耦合LC-tank振荡器显示的FoM低4dB ~ 8dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A phase noise analysis of CMOS colpitts oscillators
This paper presents a closed-form symbolic formula for phase-noise in the 1/f2 region of Colpitts oscillator. Calculations based on the formula are verified by simulations, showing accurate results under general assumptions. A new topology of differential Colpitts is proposed, coupling two single-ended Colpitts oscillators by a center tapped inductor insteod of a common mode capacitor. A comparison of phase noise between the differential Colpitts oscillator and the cross-coupled LC-tank oscillator is carried out, showing the LC-tank oscillator presents a better phase noise, working in the same condition. Several prototypes of both Copitts and cross-coupled oscillators have been implemented in a 0.35μm CMOS process. The best performance of the LC-tank oscillators shows a phase noise of-139dB/Hz at 3MHz offset frequency from a 3GHz carrier with a 10mW power consumption, resulting in an excellent phase noise figure-of-merit (FoM) of 189dBC/Hz. Under the same working conditions, the FoM displayed by the differential Colpitts oscillators is between 4dB and 8dB lower than the FoM displayed by the cross-coupled LC-tank oscillators.
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