半导体器件三维有限元模拟

1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1980.1156066

E. Buturla, P. Cottrell, B. Grossman, K. Salsburg, M. Lawlor, C. McMullen

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引用次数: 32

摘要

在半导体中移动载波输运，在三维模拟，使用有限元方法，将报告。该算法已被用于模拟短通道长度和窄通道宽度对IGFET阈值的综合影响。

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Three-dimensional finite element simulation of semiconductor devices

Mobile carrier transport in semiconductors, simulated in three dimensions, using the finite element method, will be reported. The algorithm has been used to model the combined effect of short channel lengths and narrow channel widths on the threshold of an IGFET.

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1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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