M. O. Sorokatyi, V. Strebezhev, I. Yuriychuk, S. Nichyi, V. Pylypko
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Structural, Optical and Photoelectric Properties of Crystals and Heterostructures Based on the In4Se3, In4Te3, and In4(Se3)1-x(Te3)x Semiconductors
The structural features of the CdSb-In4Se3, CdSb-In4Te3, and CdSb-In4(Se3)1-xTe3x heterojunctions obtained by RF cathode sputtering and the In4Se3-In4(Se3)1-xTe3x, In4Se3-In4Te3 heterojunctions obtained by liquid-phase epitaxy are studied. Comprehensive SEM, EDS, and AFM measurements allow to set the conditions of laser treatment of the heterojunctions for performing photon correction of their structural and photosensitive properties.
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