完全集成的片上电感:概述

R. Ondica, M. Kovác, R. Ravasz, D. Maljar, A. Hudec, V. Stopjaková
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引用次数: 0

摘要

本文介绍了全面集成电感器的概况和最新技术,以及用于将这些结构实现到芯片中的常见制造工艺。第一步是对制造技术的概述,首先是由Far-BEOL扩展的标准CMOS通用工艺和衬底改变工艺(SOI, Silicon Embedded, TSV, TGV, PTH, Core插入);并继续推进SMMT和Bond Wire等工艺节点的利用。然后,概述了全集成电感结构,包括最近几年实现的具有显着参数的拓扑结构。集成电感的关键参数包括:电感LDC、电感密度LA、质量因子Q、自谐振频率FSR和串联电阻RDC。这些参数与目的和制造过程一样重要。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fully Integrated On-Chip Inductors: An Overview
This paper presents an overview and State-of-the-Art of fully integrated inductors with common fabrication processes used for implementation of these structures into a chip. The first step is an overview of fabrication technologies that starts with standard CMOS general purpose processes expanded by Far-BEOL and substrate alteration process (SOI, Silicon Embedded, TSV, TGV, PTH, Core Insertion); and continues to advanced process nodes like SMMT and Bond Wire utilization. Then, an overview of fully integrated inductor structures consists of selected topologies with notable parameters achieved in last few years. Critical parameters of integrated inductors include: inductance LDC, inductance density LA, quality factor Q, self-resonant frequency FSR and series resistance RDC. These parameters are as important as the purpose and fabrication process.
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