R. Ondica, M. Kovác, R. Ravasz, D. Maljar, A. Hudec, V. Stopjaková
{"title":"完全集成的片上电感:概述","authors":"R. Ondica, M. Kovác, R. Ravasz, D. Maljar, A. Hudec, V. Stopjaková","doi":"10.1109/ICETA57911.2022.9974657","DOIUrl":null,"url":null,"abstract":"This paper presents an overview and State-of-the-Art of fully integrated inductors with common fabrication processes used for implementation of these structures into a chip. The first step is an overview of fabrication technologies that starts with standard CMOS general purpose processes expanded by Far-BEOL and substrate alteration process (SOI, Silicon Embedded, TSV, TGV, PTH, Core Insertion); and continues to advanced process nodes like SMMT and Bond Wire utilization. Then, an overview of fully integrated inductor structures consists of selected topologies with notable parameters achieved in last few years. Critical parameters of integrated inductors include: inductance LDC, inductance density LA, quality factor Q, self-resonant frequency FSR and series resistance RDC. These parameters are as important as the purpose and fabrication process.","PeriodicalId":151344,"journal":{"name":"2022 20th International Conference on Emerging eLearning Technologies and Applications (ICETA)","volume":"130 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fully Integrated On-Chip Inductors: An Overview\",\"authors\":\"R. Ondica, M. Kovác, R. Ravasz, D. Maljar, A. Hudec, V. Stopjaková\",\"doi\":\"10.1109/ICETA57911.2022.9974657\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents an overview and State-of-the-Art of fully integrated inductors with common fabrication processes used for implementation of these structures into a chip. The first step is an overview of fabrication technologies that starts with standard CMOS general purpose processes expanded by Far-BEOL and substrate alteration process (SOI, Silicon Embedded, TSV, TGV, PTH, Core Insertion); and continues to advanced process nodes like SMMT and Bond Wire utilization. Then, an overview of fully integrated inductor structures consists of selected topologies with notable parameters achieved in last few years. Critical parameters of integrated inductors include: inductance LDC, inductance density LA, quality factor Q, self-resonant frequency FSR and series resistance RDC. These parameters are as important as the purpose and fabrication process.\",\"PeriodicalId\":151344,\"journal\":{\"name\":\"2022 20th International Conference on Emerging eLearning Technologies and Applications (ICETA)\",\"volume\":\"130 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 20th International Conference on Emerging eLearning Technologies and Applications (ICETA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICETA57911.2022.9974657\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 20th International Conference on Emerging eLearning Technologies and Applications (ICETA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICETA57911.2022.9974657","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper presents an overview and State-of-the-Art of fully integrated inductors with common fabrication processes used for implementation of these structures into a chip. The first step is an overview of fabrication technologies that starts with standard CMOS general purpose processes expanded by Far-BEOL and substrate alteration process (SOI, Silicon Embedded, TSV, TGV, PTH, Core Insertion); and continues to advanced process nodes like SMMT and Bond Wire utilization. Then, an overview of fully integrated inductor structures consists of selected topologies with notable parameters achieved in last few years. Critical parameters of integrated inductors include: inductance LDC, inductance density LA, quality factor Q, self-resonant frequency FSR and series resistance RDC. These parameters are as important as the purpose and fabrication process.