标准电池的柔性结构及其近阈值电压工作优化方法

S. Nishizawa, T. Ishihara, H. Onodera
{"title":"标准电池的柔性结构及其近阈值电压工作优化方法","authors":"S. Nishizawa, T. Ishihara, H. Onodera","doi":"10.1109/ICCD.2012.6378646","DOIUrl":null,"url":null,"abstract":"With ever growing demands of mobile devices, low power consumption has become essential for VLSI circuits. Since standard cell libraries are typically used in many parts of VLSI circuits, their performance has a strong impact on realizing high speed and low power VLSI circuits. One of the most promising approaches for reducing the power consumption of the circuit is lowering the supply voltage. However this causes an increase of imbalance between rise and fall delays especially for cells having transistor stacks. For mitigating this imbalance, this paper proposes a structure of standard cells where the P/N ratio of each cell can be independently customized for near-threshold operation in VLSI circuits. The structure cancels the imbalance between rise and fall delays at the expense of cell area. The experiments with ISCAS'85 benchmark circuits demonstrate that the standard cell library consisting of the proposed cells reduces the power consumption of the benchmark circuits by 16% on average without increasing the circuit area, compared to that of the same circuit synthesized with a library which is not optimized for the near-threshold operation.","PeriodicalId":313428,"journal":{"name":"2012 IEEE 30th International Conference on Computer Design (ICCD)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A flexible structure of standard cell and its optimization method for near-threshold voltage operation\",\"authors\":\"S. Nishizawa, T. Ishihara, H. Onodera\",\"doi\":\"10.1109/ICCD.2012.6378646\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"With ever growing demands of mobile devices, low power consumption has become essential for VLSI circuits. Since standard cell libraries are typically used in many parts of VLSI circuits, their performance has a strong impact on realizing high speed and low power VLSI circuits. One of the most promising approaches for reducing the power consumption of the circuit is lowering the supply voltage. However this causes an increase of imbalance between rise and fall delays especially for cells having transistor stacks. For mitigating this imbalance, this paper proposes a structure of standard cells where the P/N ratio of each cell can be independently customized for near-threshold operation in VLSI circuits. The structure cancels the imbalance between rise and fall delays at the expense of cell area. The experiments with ISCAS'85 benchmark circuits demonstrate that the standard cell library consisting of the proposed cells reduces the power consumption of the benchmark circuits by 16% on average without increasing the circuit area, compared to that of the same circuit synthesized with a library which is not optimized for the near-threshold operation.\",\"PeriodicalId\":313428,\"journal\":{\"name\":\"2012 IEEE 30th International Conference on Computer Design (ICCD)\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-09-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE 30th International Conference on Computer Design (ICCD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCD.2012.6378646\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 30th International Conference on Computer Design (ICCD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCD.2012.6378646","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

随着移动设备需求的不断增长,低功耗已成为VLSI电路的必要条件。由于标准单元库通常用于VLSI电路的许多部分,因此其性能对实现高速低功耗VLSI电路具有重要影响。降低电路功耗最有希望的方法之一是降低电源电压。然而,这会导致上升和下降延迟之间的不平衡增加,特别是对于具有晶体管堆栈的电池。为了减轻这种不平衡,本文提出了一种标准单元结构,其中每个单元的P/N比可以独立定制,用于VLSI电路中的近阈值操作。该结构以牺牲细胞面积为代价消除了上升和下降延迟之间的不平衡。在ISCAS’85基准电路上的实验表明,与未针对近阈值操作进行优化的标准单元库合成的相同电路相比,由所提出的单元组成的标准单元库在不增加电路面积的情况下,平均降低了基准电路16%的功耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A flexible structure of standard cell and its optimization method for near-threshold voltage operation
With ever growing demands of mobile devices, low power consumption has become essential for VLSI circuits. Since standard cell libraries are typically used in many parts of VLSI circuits, their performance has a strong impact on realizing high speed and low power VLSI circuits. One of the most promising approaches for reducing the power consumption of the circuit is lowering the supply voltage. However this causes an increase of imbalance between rise and fall delays especially for cells having transistor stacks. For mitigating this imbalance, this paper proposes a structure of standard cells where the P/N ratio of each cell can be independently customized for near-threshold operation in VLSI circuits. The structure cancels the imbalance between rise and fall delays at the expense of cell area. The experiments with ISCAS'85 benchmark circuits demonstrate that the standard cell library consisting of the proposed cells reduces the power consumption of the benchmark circuits by 16% on average without increasing the circuit area, compared to that of the same circuit synthesized with a library which is not optimized for the near-threshold operation.
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