适用于军用和航空电子波分复用系统的红外表面发光二极管的可靠性

40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI:10.1109/ECTC.1990.122166

C. E. Lindsay, R. Conlon

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引用次数: 0

摘要

对工作在750 nm、1060 nm和1300 nm的大功率双异质结表面发光二极管(SLEDs)的可靠性进行了比较研究。包括9000小时全自动寿命测试的数据分析。描述了特定于每个工作波长的退化和失效特征，并与每个器件批次的结构和性能数据相关。计算了平均寿命和活化能。测试的器件在非常高的电流密度和温度(23 kA/cm/sup 2/和135℃)下显示出令人印象深刻的可靠性。与所有三种波长相同的1300 nm器件在测试前没有被烧毁，在测试9000小时后记录了0/60的故障。根据计算的活化能，在25℃环境和全直流驱动下，每个波长下的最佳批次产生的MTTF(平均失效时间)超过10/sup 6/ h。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Reliability of infrared surface light emitting diodes suitable for military and avionic wavelength division multiplexing systems

A comparative study of the reliability of high-power double-heterojunction surface light-emitting diodes (SLEDs) operating at 750 nm, 1060 nm, and 1300 nm is reported. A data analysis from 9000 h of fully automated life testing is included. Degradation and failure characteristics specific to each operating wavelength are described and related to structural and performance data on each device batch. Median life and activation energies are calculated. The devices examined have shown impressive reliability at very high current densities and temperature (23 kA/cm/sup 2/ and 135 degrees C). The 1300-nm devices, which in common with all three wavelengths received no pretest burn in, registered 0/60 failures after 9000 h of testing. Based on the calculated activation energies, the best batches at each wavelength produce MTTF (mean time to failure) figures in excess of 10/sup 6/ h at 25 degrees C ambient and full DC drive.<>

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来源期刊

40th Conference Proceedings on Electronic Components and Technology

CiteScore

3.10

自引率

0.00%

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