{"title":"单片和混合微波集成电路","authors":"W. Wisseman, J. Gewartowski","doi":"10.1109/ISSCC.1980.1156096","DOIUrl":null,"url":null,"abstract":"Microwave ICs, using both hybrid and monolithic approaches, are being realized with both silicon and gallium arsenide technologies. The panel will discuss the advantages and limitations of the alternatives from performance, frequency, reliability and cost points of view.","PeriodicalId":229101,"journal":{"name":"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Monolithic and hybrid microwave ICs\",\"authors\":\"W. Wisseman, J. Gewartowski\",\"doi\":\"10.1109/ISSCC.1980.1156096\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Microwave ICs, using both hybrid and monolithic approaches, are being realized with both silicon and gallium arsenide technologies. The panel will discuss the advantages and limitations of the alternatives from performance, frequency, reliability and cost points of view.\",\"PeriodicalId\":229101,\"journal\":{\"name\":\"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.1980.1156096\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1980.1156096","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Microwave ICs, using both hybrid and monolithic approaches, are being realized with both silicon and gallium arsenide technologies. The panel will discuss the advantages and limitations of the alternatives from performance, frequency, reliability and cost points of view.