最先进的CMOS和SiGe射频晶体管的速度和功率性能比较

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI:10.1109/SMIC.2004.1398181

B. Jagannathan, D. Greenberg, D. Sanderson, J. Rieh, J. Pekarik, J. Plouchart, G. Freeman

{"title":"最先进的CMOS和SiGe射频晶体管的速度和功率性能比较","authors":"B. Jagannathan, D. Greenberg, D. Sanderson, J. Rieh, J. Pekarik, J. Plouchart, G. Freeman","doi":"10.1109/SMIC.2004.1398181","DOIUrl":null,"url":null,"abstract":"DC and RF characteristics of Si nFETs and SiGe HBTs are compared in IBM's leading-edge production RFCMOS and BiCMOS technologies at 90 and 130 nm nodes respectively. Underlying performance trade-offs to achieve low power circuit operation are investigated.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Speed and power performance comparison of state-of-the-art CMOS and SiGe RF transistors\",\"authors\":\"B. Jagannathan, D. Greenberg, D. Sanderson, J. Rieh, J. Pekarik, J. Plouchart, G. Freeman\",\"doi\":\"10.1109/SMIC.2004.1398181\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"DC and RF characteristics of Si nFETs and SiGe HBTs are compared in IBM's leading-edge production RFCMOS and BiCMOS technologies at 90 and 130 nm nodes respectively. Underlying performance trade-offs to achieve low power circuit operation are investigated.\",\"PeriodicalId\":288561,\"journal\":{\"name\":\"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMIC.2004.1398181\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2004.1398181","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 12

摘要

在IBM领先的量产RFCMOS和BiCMOS技术下，分别在90 nm和130 nm节点上比较了Si nfet和SiGe hbt的直流和射频特性。研究了实现低功耗电路运行的基本性能权衡。

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Speed and power performance comparison of state-of-the-art CMOS and SiGe RF transistors

DC and RF characteristics of Si nFETs and SiGe HBTs are compared in IBM's leading-edge production RFCMOS and BiCMOS technologies at 90 and 130 nm nodes respectively. Underlying performance trade-offs to achieve low power circuit operation are investigated.

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来源期刊

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

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