{"title":"用于中红外产生的垂直腔面发射激光器","authors":"Y. Morozov, I. Nefedov, V. Aleshkin","doi":"10.1109/ICTON.2003.1264624","DOIUrl":null,"url":null,"abstract":"The model of laser making use of GaAs/AlGaAs structure lattice nonlinearity for mid-infrared emission is proposed. Here, two-frequency near-infrared simultaneous oscillations are mixed in vertical-cavity surface-emitting device. The power of mid-infrared emission at wavelength about 10 /spl mu/m is shown to be 0.1-1 /spl mu/W in continuous wave operation.","PeriodicalId":272700,"journal":{"name":"Proceedings of 2003 5th International Conference on Transparent Optical Networks, 2003.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Vertical-cavity surface-emitting laser for mid-infrared generation\",\"authors\":\"Y. Morozov, I. Nefedov, V. Aleshkin\",\"doi\":\"10.1109/ICTON.2003.1264624\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The model of laser making use of GaAs/AlGaAs structure lattice nonlinearity for mid-infrared emission is proposed. Here, two-frequency near-infrared simultaneous oscillations are mixed in vertical-cavity surface-emitting device. The power of mid-infrared emission at wavelength about 10 /spl mu/m is shown to be 0.1-1 /spl mu/W in continuous wave operation.\",\"PeriodicalId\":272700,\"journal\":{\"name\":\"Proceedings of 2003 5th International Conference on Transparent Optical Networks, 2003.\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-06-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 2003 5th International Conference on Transparent Optical Networks, 2003.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICTON.2003.1264624\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 2003 5th International Conference on Transparent Optical Networks, 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICTON.2003.1264624","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Vertical-cavity surface-emitting laser for mid-infrared generation
The model of laser making use of GaAs/AlGaAs structure lattice nonlinearity for mid-infrared emission is proposed. Here, two-frequency near-infrared simultaneous oscillations are mixed in vertical-cavity surface-emitting device. The power of mid-infrared emission at wavelength about 10 /spl mu/m is shown to be 0.1-1 /spl mu/W in continuous wave operation.