基于奇异值分解的四端口去嵌入和单步误差校正片上测量

Xiaoyun Wei, G. Niu, S. Sweeney, S. S. Taylor
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引用次数: 12

摘要

我们提出了基于4端口的两步片上寄生去嵌入和单步误差校准结果,用于0.13 μ m RF CMOS工艺的片上晶体管测量。采用单步分解方法求解未知的四端口传输参数,量化测量误差。尽管与阻抗标准基板上的标准相比,片上标准的精度较低,但单步误差校准为被检查的晶体管提供了合理的y参数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Singular-Value-Decomposition Based Four Port De-embedding and Single-step Error Calibration for On-chip Measurement
We present the 4-port based two-step on-chip parasitics de-embedding and single-step error calibration results for on-chip transistor measurements on a 0.13 mum RF CMOS process. SVD is used for solving the unknown 4-port transmission parameters and quantifying the measurement errors in the single-step approach. Despite the less accurate on-chip standards compared to standards on an impedance standard substrate, single-step error calibration gives reasonable Y-parameters for the examined transistor.
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