{"title":"基于奇异值分解的四端口去嵌入和单步误差校正片上测量","authors":"Xiaoyun Wei, G. Niu, S. Sweeney, S. S. Taylor","doi":"10.1109/MWSYM.2007.380537","DOIUrl":null,"url":null,"abstract":"We present the 4-port based two-step on-chip parasitics de-embedding and single-step error calibration results for on-chip transistor measurements on a 0.13 mum RF CMOS process. SVD is used for solving the unknown 4-port transmission parameters and quantifying the measurement errors in the single-step approach. Despite the less accurate on-chip standards compared to standards on an impedance standard substrate, single-step error calibration gives reasonable Y-parameters for the examined transistor.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Singular-Value-Decomposition Based Four Port De-embedding and Single-step Error Calibration for On-chip Measurement\",\"authors\":\"Xiaoyun Wei, G. Niu, S. Sweeney, S. S. Taylor\",\"doi\":\"10.1109/MWSYM.2007.380537\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present the 4-port based two-step on-chip parasitics de-embedding and single-step error calibration results for on-chip transistor measurements on a 0.13 mum RF CMOS process. SVD is used for solving the unknown 4-port transmission parameters and quantifying the measurement errors in the single-step approach. Despite the less accurate on-chip standards compared to standards on an impedance standard substrate, single-step error calibration gives reasonable Y-parameters for the examined transistor.\",\"PeriodicalId\":213749,\"journal\":{\"name\":\"2007 IEEE/MTT-S International Microwave Symposium\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE/MTT-S International Microwave Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2007.380537\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE/MTT-S International Microwave Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2007.380537","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
摘要
我们提出了基于4端口的两步片上寄生去嵌入和单步误差校准结果,用于0.13 μ m RF CMOS工艺的片上晶体管测量。采用单步分解方法求解未知的四端口传输参数,量化测量误差。尽管与阻抗标准基板上的标准相比,片上标准的精度较低,但单步误差校准为被检查的晶体管提供了合理的y参数。
Singular-Value-Decomposition Based Four Port De-embedding and Single-step Error Calibration for On-chip Measurement
We present the 4-port based two-step on-chip parasitics de-embedding and single-step error calibration results for on-chip transistor measurements on a 0.13 mum RF CMOS process. SVD is used for solving the unknown 4-port transmission parameters and quantifying the measurement errors in the single-step approach. Despite the less accurate on-chip standards compared to standards on an impedance standard substrate, single-step error calibration gives reasonable Y-parameters for the examined transistor.