CDFII硅探测器

Proceedings of the 21st IEEE Instrumentation and Measurement Technology Conference (IEEE Cat. No.04CH37510) Pub Date : 2004-05-18 DOI:10.1109/IMTC.2004.1351163

J. Thom

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引用次数: 0

摘要

CDFII硅探测器由8层双面硅微带传感器组成，共722,432个读出通道，是目前HEP实验中使用的最大的硅探测器之一。经过两年的数据采集，我们报告了我们操作这个复杂设备的经验。介绍了CDFII硅探测器的性能，并讨论了其对物理分析的影响。我们已经观察到辐射损伤的可测量影响。简要回顾了这些结果及其对探测器预期寿命的影响。

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The CDFII silicon detector

The CDFII silicon detector consists of 8 layers of double-sided silicon micro-strip sensors totalling 722,432 readout channels, making it one of the largest silicon detectors in present use by an HEP experiment. After two years of data taking, we report on our experience operating the complex device. The performance of the CDFII silicon detector is presented and its impact on physics analyses is discussed. We have already observed measurable effects from radiation damage. These results and their impact on the expected lifetime of the detector are briefly reviewed.

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Proceedings of the 21st IEEE Instrumentation and Measurement Technology Conference (IEEE Cat. No.04CH37510)

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