单个5V 64K动态RAM

1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1980.1156076

K. Itoh, R. Hori, H. Masuda, Y. Kamigaki, H. Kawamoto, H. Katto

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引用次数: 34

摘要

本文将介绍一个5V, 64K动态RAM，带有衬底偏置发生器，在300ns周期时间下典型功耗为170mW，访问时间为120ns，芯片面积为25.8mm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A single 5V 64K dynamic RAM

This paper will report on a single 5V, 64K dynamic RAM with a substrate-bias generator, typical power dissipation of 170mW at 300ns cycle time, access time of 120ns and 25.8mm2chip area.

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来源期刊

1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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