Si, InP和GaAs衬底器件中热阻温度和功率依赖的线性模型

Seventeenth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (Cat. No.01CH37189) Pub Date : 2001-03-20 DOI:10.1109/STHERM.2001.915183

D. Walkey, T. Smy, T. MacElwee, M. Maliepaard

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引用次数: 9

摘要

集成高功率电路通常是在Si, InP或GaAs衬底上形成的。通过背面温度和自热，导出了热阻与温度相关的导热系数的线性模型。应用于InP衬底器件，发现模型预测在功率水平为3 mW//spl mu/m/sup 2/和衬底温度范围超过165/spl℃的测量值的5%以内。

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Linear models for temperature and power dependence of thermal resistance in Si, InP and GaAs substrate devices

Integrated high-power circuits are typically formed on Si, InP or GaAs substrates. Linear models are derived for the dependence of thermal resistance on temperature dependent thermal conductivity through backside temperature and self-heating. Applied to InP substrate devices, the model predictions are found to be within 5% of measurements for power levels to 3 mW//spl mu/m/sup 2/ and over a 165/spl deg/C substrate temperature range.

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Seventeenth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (Cat. No.01CH37189)

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