Improved Device Performance of Polarity Controllable–Ferroelectric–Field Effect Transistor Under the Influence of Fixed Trap Charges

In the present work, a detailed study has been carried out to examine the impact of fixed trap charges (FTC) on Polarity Controllable–Ferroelectric–Field Effect Transistor (PC-FE-FET). The device performance has been explored exhaustively and various characteristics such as potential, gain, total gate capacitance, subthreshold swing, threshold voltage and drain induced barrier lowering have been studied for both fresh and damaged devices. Due to presence of ferroelectric layer, the proposed device shows superior device performance over conventional device for both n- and p- operational modes. It has been demonstrated that n- mode device with negative trap charges (NTC) and p- mode device with positive trap charges (PTC) exhibits excellent steep subthreshold characteristics in comparison to fresh device in the presence of trap charges thereby implying that the proposed PC-FE-FET exhibits better performance and offers more reliability towards FTC in comparison to conventional device.