半导体内部制程的虚结温度测量方法

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2015-06-15 DOI:10.1109/ISPSD.2015.7123455

C. Herold, J. Franke, Riteshkumar Bhojani, A. Schleicher, J. Lutz

{"title":"半导体内部制程的虚结温度测量方法","authors":"C. Herold, J. Franke, Riteshkumar Bhojani, A. Schleicher, J. Lutz","doi":"10.1109/ISPSD.2015.7123455","DOIUrl":null,"url":null,"abstract":"This paper discusses the limitation in measurement accuracy of junction temperature measurements of bipolar devices. A limiting factor the measurement delay, caused by slow removal of charge carriers, was investigated by single pulse measurements and evaluated by simulations. A minimal measurement delay of 650μs was found for a 6.5 kV IGBT at high temperature.","PeriodicalId":289196,"journal":{"name":"2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"Methods for virtual junction temperature measurement respecting internal semiconductor processes\",\"authors\":\"C. Herold, J. Franke, Riteshkumar Bhojani, A. Schleicher, J. Lutz\",\"doi\":\"10.1109/ISPSD.2015.7123455\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper discusses the limitation in measurement accuracy of junction temperature measurements of bipolar devices. A limiting factor the measurement delay, caused by slow removal of charge carriers, was investigated by single pulse measurements and evaluated by simulations. A minimal measurement delay of 650μs was found for a 6.5 kV IGBT at high temperature.\",\"PeriodicalId\":289196,\"journal\":{\"name\":\"2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2015.7123455\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2015.7123455","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 17

摘要

本文讨论了双极器件结温测量精度的局限性。通过单脉冲测量研究了由于载流子移动缓慢引起的测量延迟，并进行了仿真分析。在高温条件下，6.5 kV IGBT的最小测量延迟为650μs。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Methods for virtual junction temperature measurement respecting internal semiconductor processes

This paper discusses the limitation in measurement accuracy of junction temperature measurements of bipolar devices. A limiting factor the measurement delay, caused by slow removal of charge carriers, was investigated by single pulse measurements and evaluated by simulations. A minimal measurement delay of 650μs was found for a 6.5 kV IGBT at high temperature.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

自引率

0.00%

发文量