使用一维选择装置的1TnR阵列架构

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers Pub Date : 2014-06-09 DOI:10.1109/VLSIT.2014.6894404

C. Ahn, Zizhen Jiang, Chi-Shuen Lee, Hong-Yu Chen, Jiale Liang, L. Liyanage, H. Wong

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引用次数: 4

摘要

介绍了在单碳纳米管场效应晶体管(CNFET)上的相变存储器(PCM)电池在实现1TnR阵列结构方面的应用。使用CNFET作为一维选择器，在高电流密度下具有超低泄漏(106)，使具有成本效益的PCM电池能够在大型2D阵列中以宽电压裕度工作。PCM电池在100次循环中获得均匀的电特性，开/关比为~ 100，低SET/RESET电流<;1μ。

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A 1TnR array architecture using a one-dimensional selection device

Phase-change memory (PCM) cells on a single carbon nanotube field-effect transistor (CNFET) are demonstrated toward the realization of the 1TnR array architecture. The use of CNFET as one-dimensional selector, which exhibits ultra-low leakage (<; 1 pA) and large ON/OFF ratio (> 106) at high current densities, enables the cost-effective PCM cell to operate with a wide voltage margin in large 2D arrays. Uniform electrical characteristics of PCM cells over 100 cycles are obtained with the ON/OFF ratio of ~ 100 and the low SET/RESET currents of <; 1 μA.

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来源期刊

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers

CiteScore

3.40

自引率

0.00%

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