Olli-Pekka Kilpi, Jun Wu, J. Svensson, E. Lind, L. Wernersson
{"title":"垂直异质结InAs/InGaAs纳米线mosfet在Si上，离子= 330 μA/μm, Ioff = 100 nA/μm, VD = 0.5 V","authors":"Olli-Pekka Kilpi, Jun Wu, J. Svensson, E. Lind, L. Wernersson","doi":"10.23919/VLSIT.2017.7998191","DOIUrl":null,"url":null,"abstract":"We present vertical InAs nanowire MOSFETs on Si with an In<inf>0.7</inf>Ga<inf>0.3</inf>As drain. The devices show Ion and gm/SS record performance for vertical MOSFETs and I<inf>off</inf> below 1 nA/μm at V<inf>d</inf> 0.5 V. We show a device with gm=1.4 mS/μm and SS=85 mV/dec, therefore having Q-value (gm/SS) of 16. The device has I<inf>on</inf>=330 μA/μm and 46 μA/μm at Ioff 100 nA/μm and 1 nA/μm, respectively. Furthermore, we show a device with SS=68 mV/dec and I<inf>on</inf>=88 μA/μm at I<inf>off</inf> 1 nA/μm and V<inf>d</inf> 0.5 V.","PeriodicalId":333275,"journal":{"name":"2017 Symposium on VLSI Technology","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with Ion = 330 μA/μm at Ioff = 100 nA/μm and VD = 0.5 V\",\"authors\":\"Olli-Pekka Kilpi, Jun Wu, J. Svensson, E. Lind, L. Wernersson\",\"doi\":\"10.23919/VLSIT.2017.7998191\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present vertical InAs nanowire MOSFETs on Si with an In<inf>0.7</inf>Ga<inf>0.3</inf>As drain. The devices show Ion and gm/SS record performance for vertical MOSFETs and I<inf>off</inf> below 1 nA/μm at V<inf>d</inf> 0.5 V. We show a device with gm=1.4 mS/μm and SS=85 mV/dec, therefore having Q-value (gm/SS) of 16. The device has I<inf>on</inf>=330 μA/μm and 46 μA/μm at Ioff 100 nA/μm and 1 nA/μm, respectively. Furthermore, we show a device with SS=68 mV/dec and I<inf>on</inf>=88 μA/μm at I<inf>off</inf> 1 nA/μm and V<inf>d</inf> 0.5 V.\",\"PeriodicalId\":333275,\"journal\":{\"name\":\"2017 Symposium on VLSI Technology\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/VLSIT.2017.7998191\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSIT.2017.7998191","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with Ion = 330 μA/μm at Ioff = 100 nA/μm and VD = 0.5 V
We present vertical InAs nanowire MOSFETs on Si with an In0.7Ga0.3As drain. The devices show Ion and gm/SS record performance for vertical MOSFETs and Ioff below 1 nA/μm at Vd 0.5 V. We show a device with gm=1.4 mS/μm and SS=85 mV/dec, therefore having Q-value (gm/SS) of 16. The device has Ion=330 μA/μm and 46 μA/μm at Ioff 100 nA/μm and 1 nA/μm, respectively. Furthermore, we show a device with SS=68 mV/dec and Ion=88 μA/μm at Ioff 1 nA/μm and Vd 0.5 V.
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