LPDDR4存储器控制器的过程容错半自阻抗校准方法

Ho Joon Lee, Yong-Bin Kim
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引用次数: 7

摘要

提出了一种利用低电压端接摆幅逻辑实现的传输线驱动器半自阻抗校准的过程变化补偿技术。基于JEDEC LPDDR4(低功耗双数据速率)标准,分析和设计了驱动电路上拉和下拉网络的阻抗校准。在阻抗失配分析的基础上,提出了一种新的LPDDR4半自阻抗校准电路,利用工艺监控电路补偿工艺变化引起的驱动阻抗失配。该电路采用180nm CMOS技术设计并实现,电源电压为1.8V。采用半自校准电路,在无功率开销的上拉网络中,由于过程变化引起的±VOH电平变化减少了81%,在下拉网络中减少了74%,因为它是一种前景校准方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A process tolerant semi-self impedance calibration method for LPDDR4 memory controller
This paper presents a novel process variation compensation technique for semi-self impedance calibration of the transmission line driver implemented with the Low Voltage Swing Terminated Logic (LVSTL). The impedance calibration in the pull-up and pull-down networks of the driver circuits are analyzed and designed based on the JEDEC LPDDR4(Low Power Double Data Rate) standard. Based on the impedance mismatch analysis, a new semi-self impedance calibration circuit for LPDDR4 is proposed to compensate the driver impedance mismatch caused by the process variation using process monitoring circuit. The proposed circuit is designed and implemented with 180nm CMOS technology using 1.8V supply voltage. With the proposed semi-self calibration circuit, ± VOH level change due to process variations is reduced by 81% in pull-up and 74% in pull-down networks without power overhead because it is foreground calibration scheme.
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