应变soi衬底的RTA工艺弛豫

2005 IEEE International SOI Conference Proceedings Pub Date : 2005-12-27 DOI:10.1109/SOI.2005.1563546

K. Yamasaki, D. Kosemura, S. Tanaka, A. Ogura, I. Ichiba, R. Shimidzu

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引用次数: 0

摘要

采用新开发的高分辨率紫外-拉曼光谱对三种不同类型的应变si衬底EPI、SGOI和SSOI进行了评价。在1050/spl度/C的温度下，RTA对结构进行了弛豫。对SSOI进行RTA后，拉曼峰向更大的波数偏移，表明应变松弛。在EPI情况下，由于Ge扩散而不是应变松弛，峰值向低波数偏移。SGOI表现出SSOI和EPI的复合特征。

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Relaxation of strained-SOI substrates by RTA process

Three different type strained-Si substrates, EPI, SGOI and SSOI, were evaluated by newly developed high-resolution UV-Raman spectroscopy. The structure relaxation occurred by RTA at 1050/spl deg/C. The Raman peak shifted toward larger wavenumber after RTA for SSOI, indicating strain relaxation. The peak shifted toward lower wavenumber in the case of EPI due to the Ge diffusion rather than strain relaxation. The SGOI showed complex characteristics of SSOI and EPI.

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2005 IEEE International SOI Conference Proceedings

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