{"title":"低噪声、高带宽0.35µm CMOS跨阻放大器","authors":"E. Hammoudi, A. Mokhtar","doi":"10.1109/ICM.2009.5418634","DOIUrl":null,"url":null,"abstract":"This paper describes and analyzes the optimization of a low-noise and high-bandwidth transimpedance amplifier featuring a large dynamic range. The designed amplifier is configured on three identical stages that use an active load. This topology displays a transimpedance gain of 160 kΩ, which is necessary to obtain a high sensitivity. This structure operates at 3.3 V power supply voltage, exhibits a gain bandwidth product of 28 THzΩ and a low-noise level of about 0.862 pA/Hz0.5 This transimpedance amplifier can reach a transmission speed of 350 Mb/s for a photocurrent of 0.5 µA. The predicted performance is verified using simulations by means of PSPICE tools with 0.35 µm CMOS AMS parameters.","PeriodicalId":391668,"journal":{"name":"2009 International Conference on Microelectronics - ICM","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Low noise and high bandwidth 0.35 µm CMOS transimpedance amplifier\",\"authors\":\"E. Hammoudi, A. Mokhtar\",\"doi\":\"10.1109/ICM.2009.5418634\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes and analyzes the optimization of a low-noise and high-bandwidth transimpedance amplifier featuring a large dynamic range. The designed amplifier is configured on three identical stages that use an active load. This topology displays a transimpedance gain of 160 kΩ, which is necessary to obtain a high sensitivity. This structure operates at 3.3 V power supply voltage, exhibits a gain bandwidth product of 28 THzΩ and a low-noise level of about 0.862 pA/Hz0.5 This transimpedance amplifier can reach a transmission speed of 350 Mb/s for a photocurrent of 0.5 µA. The predicted performance is verified using simulations by means of PSPICE tools with 0.35 µm CMOS AMS parameters.\",\"PeriodicalId\":391668,\"journal\":{\"name\":\"2009 International Conference on Microelectronics - ICM\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International Conference on Microelectronics - ICM\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICM.2009.5418634\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Conference on Microelectronics - ICM","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2009.5418634","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low noise and high bandwidth 0.35 µm CMOS transimpedance amplifier
This paper describes and analyzes the optimization of a low-noise and high-bandwidth transimpedance amplifier featuring a large dynamic range. The designed amplifier is configured on three identical stages that use an active load. This topology displays a transimpedance gain of 160 kΩ, which is necessary to obtain a high sensitivity. This structure operates at 3.3 V power supply voltage, exhibits a gain bandwidth product of 28 THzΩ and a low-noise level of about 0.862 pA/Hz0.5 This transimpedance amplifier can reach a transmission speed of 350 Mb/s for a photocurrent of 0.5 µA. The predicted performance is verified using simulations by means of PSPICE tools with 0.35 µm CMOS AMS parameters.
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