一个简单的SABER模拟器高压MOSFET行为模型

2021 IEEE 27th International Symposium for Design and Technology in Electronic Packaging (SIITME) Pub Date : 2021-10-27 DOI:10.1109/SIITME53254.2021.9663678

O. Luca

{"title":"一个简单的SABER模拟器高压MOSFET行为模型","authors":"O. Luca","doi":"10.1109/SIITME53254.2021.9663678","DOIUrl":null,"url":null,"abstract":"A behavioral High Voltage MOSFET model was developed by the author as an alternative to the high complex models which requires a huge effort for parameters extraction and to the available limited MOSFET models with tolerances for the model parameters.","PeriodicalId":426485,"journal":{"name":"2021 IEEE 27th International Symposium for Design and Technology in Electronic Packaging (SIITME)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A simple High Voltage MOSFET behavioural model for SABER Simulator\",\"authors\":\"O. Luca\",\"doi\":\"10.1109/SIITME53254.2021.9663678\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A behavioral High Voltage MOSFET model was developed by the author as an alternative to the high complex models which requires a huge effort for parameters extraction and to the available limited MOSFET models with tolerances for the model parameters.\",\"PeriodicalId\":426485,\"journal\":{\"name\":\"2021 IEEE 27th International Symposium for Design and Technology in Electronic Packaging (SIITME)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE 27th International Symposium for Design and Technology in Electronic Packaging (SIITME)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIITME53254.2021.9663678\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 27th International Symposium for Design and Technology in Electronic Packaging (SIITME)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIITME53254.2021.9663678","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

作者开发了一种行为高压MOSFET模型，作为需要大量参数提取的高复杂模型和具有模型参数公差的可用有限MOSFET模型的替代方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A simple High Voltage MOSFET behavioural model for SABER Simulator

A behavioral High Voltage MOSFET model was developed by the author as an alternative to the high complex models which requires a huge effort for parameters extraction and to the available limited MOSFET models with tolerances for the model parameters.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2021 IEEE 27th International Symposium for Design and Technology in Electronic Packaging (SIITME)

自引率

0.00%

发文量