使用亚阈值mosfet的23pW, 780ppm/°C无电阻电流基准

ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC) Pub Date : 2014-11-03 DOI:10.1109/ESSCIRC.2014.6942036

M. Choi, Inhee Lee, Taekwang Jang, D. Blaauw, D. Sylvester

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引用次数: 46

摘要

本文提出了一个仅mosfet, 20pA, 780ppm/°C的电流基准，消耗23pW。超低功耗电路利用亚阈值偏置mosfet和互补绝对温度(CTAT)栅极电压来补偿温度依赖性。该设计电源电压灵敏度为0.58%/V，负载灵敏度为0.25%/V。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 23pW, 780ppm/°C resistor-less current reference using subthreshold MOSFETs

This paper proposes a MOSFET-only, 20pA, 780ppm/°C current reference that consumes 23pW. The ultra-low power circuit exploits subthreshold-biased MOSFETs and a complementary-to-absolute temperature (CTAT) gate voltage to compensate for temperature dependency. The design shows low supply voltage sensitivity of 0.58%/V and a load sensitivity of 0.25%/V.

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ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)

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