Manufactured-on-demand steep subthreshold organic field effect transistor for low power and high sensitivity ion and fluorescence sensing

A printable device structure design is introduced to fabricate low voltage organic field effect transistor (OFET) of steep subthreshold (80 mV/dec) using thick gate dielectric layers and high throughput printing/coating processes. The device design also bring benefit on excellent bias stress stability. The device is shown to able to be biased in the subthreshold regime with near zero gate voltage for low power and high sensitivity detection of both small H+ concentration (<0.1 pH) and weak fluorescence signal (< 10 μW cm−2) changes.