Atomic-layer deposition for development of advanced electron devices

This work resumes some of the most important results that have been obtained in our research group regarding the use of atomic-layer deposition (ALD) as the main thin-film deposition technique for metal oxides with high dielectric constant. ALD has been applied for the development of logic, memory, sensing and quantum technologies in which ultra-thin metal oxides (Al2O3, HfO2 and TiO2 with a physical thickness of less than 10nm), are the active part of the final devices under study.