基于130nm CMOS的高效时间交错结构的4GS/s 8位SAR ADC

Benjamín T. Reyes, Laura Biolato, Agustín C. Galetto, Leandro Passetti, Fredy Solis, J. I. Giubilatto, L. A. Reyes, Álvaro Fernandez Bocco, M. Hueda
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引用次数: 2

摘要

本文介绍了一种8位、4 GS/s、时间交错(TI)逐次逼近寄存器(SAR)模数转换器(ADC)的设计、实现和特性,该模数转换器具有非缓冲分层解复用采样架构。ADC的核心由32个异步SAR ADC组成,按4 × 8的顺序排列。提出的全动态SAR ADC具有噪声可配置比较器,可配置异步时钟和背景直流偏移校准。所述非缓冲输入信号电路包括用于跟踪带宽增强的输入匹配网络。该设计还具有可编程延迟单元,用于调整时钟采样相位失配,以及32 Gb/s低压差分信号(LVDS)接口。原型机是在$0.13 \mu \ mathm {m}$ CMOS工艺中制造的。TI-ADC在1.2 V电压下可实现7.09位峰值ENOB, 1.3 GHz输入带宽和93 mW功耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 4GS/s 8-bit SAR ADC with an Energy-Efficient Time-Interleaved Architecture in 130nm CMOS
The design, implementation and characterization of an 8-bit, 4 GS/s, time-interleaved (TI) successive approximation register (SAR) analog-to-digital converter (ADC) with a non-buffered hierarchical demultiplexing sampling architecture are presented in this work. The core of the ADC is composed of an arrangement of 32 asynchronous SAR ADCs ranked in a $4\times 8$ hierarchy. The proposed fully dynamic SAR ADC features a noise-configurable comparator, configurable asynchronous clock and background DC offset calibration. The non-buffered input signal circuit includes an input matching network for tracking bandwidth enhancement. The design also has a programmable delay cell to adjust the clock sampling phases mismatch, and a 32 Gb/s low-voltage differential signaling (LVDS) interface. The prototype is fabricated in a $0.13 \mu \mathrm{m}$ CMOS process. The TI-ADC achieves 7.09 bit of peak ENOB, 1.3 GHz input bandwidth and 93 mW of power consumption at 1.2 V.
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